Patent · US Expired

Method of manufacturing a fuse structure

US5827759A · kind A · utility

16Cited by
21References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 9, 1997
Grant dateOct 27, 1998
Priority date
Expiry dateJan 9, 2017

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S148/055
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A programmable fuse element disposed between integrated circuit elements that may be selectively joined during the manufacture or programming of an integrated circuit. The fuse element is a normally open fuse that electrically isolates the integrated circuit elements. The fuse element is comprised of a central area of conductive material insulated from the integrated circuit elements by areas of dielectric material. The integrated circuit elements and the fuse element are disposed on a thin oxide layer covering a semiconductor substrate to prevent those elements from shorting to the semiconductor substrate or to each other via the semiconductor substrate. A protective dielectric layer may be deposited over both the fuse element and the integrated circuit elements during the manufacture of the overall integrated circuit. A laser beam is used to burn through the protective layer and melts both the conductive material and the dielectric material that form the fuse element. As the fuse element melts, the conductive material contacts the integrated circuit elements thereby electrically coupling the integrated circuit elements together creating a low-resistance path.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.