Method of manufacturing a semiconductor device using a silicon fluoride oxide film
US5827778A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 1996 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Nov 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprises the steps of forming a first layer interconnect pattern overlying a substrate, forming consecutively a thin silicon oxide film and a thick silicon fluoride oxide film, selectively etching the silicon fluoride oxide film to expose a part of the silicon oxide film by using a first gas of a low fluorine content, and etching the exposed silicon oxide film by using a second gas of a high fluorine content to form a via-hole reaching the first layer interconnect pattern The silicon oxide film has a thickness from 50 to 200 nm while the silicon fluoride oxide film has a thickness of 1 .mu.m or higher. The thin silicon oxide film provides a reduced amount of an over-etch while thick silicon fluoride oxide film provides a low capacitance for the interconnect to achieve a higher operation of the LSI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.