Field-effect type superconducting device including bi-base oxide compound containing copper
US5828079A · kind A · utility
6Cited by
2References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1993 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Jun 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/128
Abstract
A field-effect type superconducting device includes a channel layer. The channel layer includes Bi-based oxide compound containing Cu. A source electrode contacts the channel layer. A drain electrode contacts the channel layer. A gate insulating film made of insulating material extends on on the channel layer. A gate electrode extends on the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.