Ultra low power pumped n-channel output buffer with self-bootstrap
US5828262A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1996 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Sep 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/09429
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An ultra-low power pumped n-channel transistor output buffer with self-bootstrapping includes an n-channel pullup transistor as the primary pullup device. A gate-to-source capacitance C.sub.gs of the pullup transistor is used to self-bootstrap the input data signal. A pass n-channel transistor is connected between the input data signal, and the gate of the pullup transistor, and is biased on a gate terminal thereof by a charge pump having a voltage magnitude one device threshold higher than the device operating rail V.sub.cc. The pass transistor, so biased, permits the input data signal, which may have a magnitude of V.sub.cc, to charge C.sub.gs. An over-voltage can be developed on the gate of the pullup transistor by the self-bootstrapping effect of C.sub.gs. The pass transistor, in addition, so biased, prevents such over-voltage on the pullup transistors gate from being shorted to V.sub.cc through a driving device. The output buffer also includes a p-channel transistor having source and drain terminals defining a channel that is connected between another pumped voltage rail, and the gate of the pullup transistor. This p-channel transistor is activated when the output on the pad i…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.