Patent · US Expired

Field effect-controllable power semiconductor component with temperature sensor

US5828263A · kind A · utility

15Cited by

6References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Josef-Matthias Gantioler · Munich, DE
Holger Heil · Frankfurt am Main, DE
Norbert Krischke · Munich, DE

Key dates

Filing date	Dec 20, 1996
Grant date	Oct 27, 1998
Priority date	—
Expiry date	Dec 20, 2016

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/111
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A temperature sensor contains a bipolar transistor adjacent a cell array of a power MOSFET or IGBT. In order to detect temperature independently of a voltage drop across the power semiconductor component, a zone of the same conduction type is disposed between the cell array and a base zone. That zone is connected to a fixed bias voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.