Magnetoresistance effect element and magnetic field detection device
US5828526A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1996 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Aug 1, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1129
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element is provided with a magnetoresistance effect film (MR film) formed of alternative laminations of magnetic layers (for example, soft magnetic layers such as Fe--Ni--Co alloy layers) which are coupled anti-ferromagnetically with each other between adjacent magnetic layers and non-magnetic layers (for example, non-magnetic layers such as Cu layers) and provided with a bias soft magnetic layer (for example, SAL layer) for application of a bias magnetic filed to the magnetoresistance effect film, where the anisotropic magnetic field (Hk) in the plane of the bias medium layer is 5 Oe.ltoreq.Hk.ltoreq.15 Oe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.