Aluminum nitride substrate and process for preparation thereof
US5830570A · kind A · utility
2Cited by
16References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Feb 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum nitride substrate composed of a sintered body base material composed mainly of aluminum nitride and an aluminum oxide layer formed on the surface of the base material, wherein at least one of the base material and the aluminum oxide layer contains at least one member selected from the group consisting of single substances, carbidies, nitrides, borides and oxides of Ti, V, Nb, Mo, W, Co and Ni. This aluminum oxide layer is formed by an oxidizing treatment of the base material, and a metal conductor layer is formed on this aluminum oxide layer. This substrate has a very high allusion to the metal conductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.