Direct multilevel thin-film transistors production method
US5830785A · kind A · utility
51Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Feb 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention can be used to make integrated circuits on the same substrate as the active matrix owing to the possibility that it offers of connecting transistor gates to sources or drains of the same or other transistors, and thus be used in a "integrated drivers" technology. It is also possible to make different types of transistors and capacitances using this method, without adding any additional mask levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.