Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC
US5831287A · kind A · utility
19Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Sep 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
A bipolar semiconductor comprising layers of SiC semiconductor material. At least one pn-junction is formed between two of the layers having charged carrier transport across the junction when the device is in a conductive state. A resistive element in series with the pn-junction lowers the current through the pn-junction as the voltage drop across the device increases with an increase in temperature. The temperature coefficient for the device switches from a negative to a positive at a lower current through the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.