Trench storage dram cell including a step transfer device

US5831301A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David V. Horak · South Burlington, US
• Toshiharu Furukawa · South Burlington, US
• Steven J. Holmes · Colchester, US
• Mark C. Hakey · Saint Albans, US
• William H. Ma · Wappingers Falls, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Jan 28, 1998
• Grant date: Nov 3, 1998
• Expiry date: Jan 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/395

Abstract

A memory cell including a substrate, at least one deep trench capacitor in the substrate, at least one FET in the substrate disposed over at least a portion of the at least one deep trench capacitor, and at least one isolation region in the substrate surrounding the at least one FET and having a greater depth than the at least one FET. The at least one FET includes a gate disposed over at least a portion of the at least one deep trench capacitor and doped regions arranged on adjacent sides of the gate and separated from the gate by an insulating layer.