Dorsal substrate guarded ISFET sensor
US5833824A · kind A · utility
18Cited by
27References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1996 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Nov 15, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An Ion-sensitive Field Effect Transistor (ISFET) sensor for sensing ion activity of a solution includes a substrate and an ISFET semiconductor die. The substrate has front surface exposed to the solution, a back surface opposite to the front surface and aperture extending between the front and back surfaces. The ISPET semiconductor die has an ion-sensitive surface with a gate region. The ion-sensitive surface is mounted to the back surface such that the gate region is exposed to the solution through the aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.