In situ method for metalizing a semiconductor catalyst
US5834069A · kind A · utility
5Cited by
16References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1996 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Apr 30, 2016 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J35/39
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A semiconductor catalyst is metalized in situ on a reaction support surface by illuminating at least a portion of the catalyst in the presence of a suitable source of metal to selectively deposit the metal on the illuminated portions. The source of metal can be applied to the reaction support surface either with the catalyst or separately, but is not attached to the catalyst until the structure is illuminated. This causes the metal to be deposited where the catalyst will be illuminated during use and therefore where photopromoted catalytic degradation can occur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.