Transparent article having protective silicon nitride film
US5834103A · kind A · utility
83Cited by
22References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1995 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Oct 19, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 .ANG. to 150 .ANG. in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.