Transducer having a resonating silicon beam and method for forming same
US5834333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1997 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Oct 23, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0045
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.