Pretreatment of semiconductor substrate
US5834372A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 1995 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Dec 12, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for pretreating a semiconductor surface, comprising the steps of: placing a titanium nitride substrate in a reaction chamber and subjecting the reaction chamber to vacuum; purging the reaction chamber with an inert gas selected from the group consisting of N.sub.2, Ar and He and evacuating the reaction chamber into 1 mTorr or lower; treating the surface of the titanium nitride substrate with a reaction gas comprising WF; charging a reducing gas and a source gas for deposition material to form a thin film on the titanium nitride substrate, by which the nucleation rate of deposition material and the number of nucleation sites on the substrate can be increased and a thin film with a uniform thickness and high density can be formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.