MIS transistor semiconductor device
US5834809A · kind A · utility
15Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1995 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Dec 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
A MIS transistor comprises a semiconductor substrate having a first conductivity type, a source region and a drain region disposed in the semiconductor substrate in spaced-apart relation from one another and having a second conductivity type, and an insulating film disposed on the surface of the semiconductor substrate. A gate electrode is disposed on the insulating film between the source region and the drain region. A diffused region having the first conductivity type is disposed in the semiconductor substrate and in contact with the source region. An oxide film is disposed on the diffused region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.