Nanoporous semiconductor material and fabrication technique for use as thermoelectric elements

US5834828A · kind A · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Stuart B. Horn · Fairfax, US
• Elizabeth Nelson · Springfield, US

Key dates

• Filing date: Sep 20, 1993
• Grant date: Nov 10, 1998
• Expiry date: Sep 20, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/93

Abstract

A nanoporous semiconductor material and fabrication technique for use as rmoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm.multidot..degree.K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.