Semiconductor integrated circuit device
US5834967A · kind A · utility
18Cited by
5References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1996 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Sep 3, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R19/0092
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor integrated circuit device includes a leak detection circuit which can be realized by small pattern area provides voltage Vb through two transistors M1n and M2n, which are caused to be operative in the sub-threshold area without use of a resistor at the gate of a leak current detection transistor MLn. The leak current detection magnification does not become dependent upon power supply voltage and temperature. Thus, detection of the leakage current can be precisely carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.