Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
US5835521A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1997 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Feb 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.