Deposition of polycrystalline diamond film on zinc sulfide substrate having nitride interlayer
US5837322A · kind A · utility
11Cited by
6References
10Claims
0Family size
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Key dates
| Filing date | Aug 11, 1997 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Aug 11, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/277
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An adhering, continuous, polycrystalline diamond film is deposited on a z sulfide substrate by forming a refractory nitride interlayer directly on the substrate and then depositing diamond on the interlayer in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. The diamond film may be of optical quality and may be deposited without mechanical treatment or seeding of the zinc sulfide substrate or the nitride interlayer. However, diamond deposition may be facilitated by abrasion of the interlayer before diamond deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.