Method of masking substrates leaving exposed facets
US5837560A · kind A · utility
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1References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of masking a substrate to leave an exposed facet for processing during fabrication of a semiconductor devices including providing a substrate formed of a semiconductor material and having a structure projecting therefrom, the structure including a facet. Ultraviolet light is selectively directing onto the substrate at an angle to the structure and opposite the facet so that the structure shades the facet from the ultra violet light. The ultra violet light reacts with the material to form an oxide mask on the substrate leaving the facet unmasked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.