Patent · US Expired

Production method for an insulation layer functioning as an intermetal dielectric

US5837611A · kind A · utility

3Cited by

2References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Zvonimir Gabric · Zorneding, DE
Oswald Spindler · Vaterstetten, DE
Thomas Grassl · Freising, DE

Key dates

Filing date	Aug 6, 1997
Grant date	Nov 17, 1998
Priority date	—
Expiry date	Aug 6, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76819
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

When large-scale integrated circuits are produced, pronounced differences in height occur within conductor track levels. Those extreme topographies lead to difficulties during photo-lithographic processes, since there is a direct relationship between resolution and depth of focus. A production method for applying an insulation layer functioning as an intermetal dielectric is based on an ozone-activated selective deposition of silicon oxide. The conductor tracks are completely encapsulated with an insulation layer, so that bulges do not occur above upper edges of the conductor tracks.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.