Use of focused ion and electron beams for fabricating a sensor on a probe tip used for scanning multiprobe microscopy and the like
US5838005A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Oct 16, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K2211/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Nanometer holes can be reliably and repeatedly defined in the tips of cantilevered probes and used in various types of scanning multiprobe microscopy by defining the hole within a layer disposed on the tip using focused electron or ion beams. The drilling of the hole on the apex of the tip and is stopped just as soon as the hole is defined through an overlying insulating layer under which lies a metallic or semiconductor layer at the apex. The hole is then backfilled with another metallic or semiconductor layer so that an active electrical junction is formed between the two layers through the hole in the insulating layer. The hole may be defined in conductive layers in various combinations with oxide layers, other metal layers and semiconductor materials to define Schottky diodes, thermocouple junctions, near-field optical detectors, and atomic force tips. As a result, two or more physical interactions may be simultaneously exploited between the fabricated tip and the scanned sample from which a scanned image may be produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.