Electrical barrier structure for semiconductor device doped with chromium and/or titanium
US5838025A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Jan 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device, preferably a laser device such as a signal generator, a signal amplifier or a signal detector e.g. a distributed feedback laser, which is implemented in III/V semiconductors. Such devices often require a barrier layer to encourage current flow to pass through the localised p/n-interface and this invention provides the barrier layer in the form of a layer of hole trapping semiconductor material located between and in contact with two p-type layers. III/V semiconductors contain at least one of indium, gallium and aluminum and at least one of phosphorus and arsenic but the preferred devices are laser devices implemented in various types of indium phosphide except for the active zone wherein photons are generated. The active zone is preferably formed of ternary and/or quaternary semiconductors. In the preferred structures the barrier layer is formed of chromium doped indium phosphide which is located between two layers of p-type indium phosphide. Alternative structures have (a) titanium doped indium phosphide between two layers of p-type indium phosphide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.