Semiconductor device having a ridge or groove
US5838028A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1997 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a semiconductor device having a structure wherein a layer comprising at least Al.sub.W Ga.sub.1-W As is formed on a substrate and a second etching stop layer, a first etching stop layer and a layer comprising Al.sub.Y Ga.sub.1-Y As are deposited on the layer comprising Al.sub.W Ga.sub.1-W As in the described order, with a portion of the layer comprising Al.sub.Y G.sub.1-Y As and a portion of the first etching stop layer being removed. This structure enables a desired ridge shape to be fabricated with good quality and allows for free selection of the Al mixed crystal ratio of the layer to be etched, and makes it possible to form the re-growth interface of GaAs. Thus, the qualty of crystal of the re-grown portion can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.