Tungsten policide contacts for semiconductor devices
US5838051A · kind A · utility
6Cited by
11References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Feb 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 uM, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.