Semiconductor substrate and semiconductor device employing the same
US5838058A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Dec 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the vicinity of the (100) plane, planar channeling by (100) type crystal planes, which are (011) plane and (011) plane according to the (100) surface plane, degrades uniformity of ion implantation. Therefore, a major surface of the substrate is established at a plane perpendicular to a crystal orientation forming an angle greater than or equal to 3.5.degree. with two planes perpendicularly intersecting the (100) plane. Namely, in consideration of fluctuation in setting to an ion implantation device and ion implantation angle, the substrate having surface orientation within a range 104 is employed. Also, by limiting the orientation to be less than or equal to 10.degree. from the (100) plane, ion implantation can be performed perpendicularly to the substrate without modifying the process condition. The result of the foregoing is a semiconductor substrate which will never cause planar channeling even when ion implantation is performed in a perpendicular direction to the surface of a semiconductor substrate of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.