Method for changing electrically programmable read-only memory devices
US5838617A · kind A · utility
13Cited by
15References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1997 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Jul 3, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A process for introducing negative charge onto the floating gate of an EPROM or EEPROM device is disclosed. The process uses CHISEL conditions to introduce charge onto the floating gate. The threshold voltage of the device is controlled by selecting a control gate voltage during programming that is less than 10 volts and that will provide a device with the desired threshold voltage. The device is then programmed using the selected control gate voltage and a negative substrate bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.