Pulsation laser having an active region with a thicker central region in a resonator length direction
US5838704A · kind A · utility
2Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | May 17, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | May 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pulsation laser includes an n-type AlGaAs cladding layer on an n-type GaAs substrate, three quantum well active layers having central increased thickness regions and disposed on the cladding layer, and a p-type AlGaAs cladding layer disposed on the quantum well active layer. The increased thickness region of the active layer is not more than one-quarter of the length of the resonator of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.