Method of forming a SiO.sub.2 passivation film on a plastic substrate
US5840374A · kind A · utility
2Cited by
9References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 11, 1996 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Jun 11, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.