Integrated emitter drain bypass capacitor for microwave/RF power device applications
US5841184A · kind A · utility
23Cited by
13References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Nov 24, 1998 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon bipolar junction transistor in integrated form is disclosed having a ballast resistance integrated onto a silicon chip. This resistance is for the purpose of thermal stability. In addition, a bypass capacitance circuit is placed in parallel with the ballast resistance again in integrated form. The silicon BJT is flip-chip mounted on a heterolithic microwave integrated circuit glass substrate having the integrated bypass capacitor circuit fabricated directly thereon. This bypass capacitor circuit is electrically in contact with the emitter fingers of the bipolar junction transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.