Single poly devices for monitoring the level and polarity of process induced charging in a MOS process

US5844300A · kind A · utility

Assignee

• Intel Corporation · US

Inventors

• Mohsen Alavi · Portland, US
• Payman Aminzadeh · Portland, US
• Robert A. Gasser · Cornelius, US
• Sunit Tyagi · Portland, US
• Gilroy Vandentop · Tempe, US

Key dates

• Filing date: Sep 19, 1996
• Grant date: Dec 1, 1998
• Expiry date: Sep 19, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A monitoring device to monitor process induced charge employing a single layer of polysilicon forming a floating gate. The device comprises two capacitors, one for charging and the other for discharging a floating gate of an n-channel transistor. Embodiments which permit the monitoring of positive charge, negative charge and both positive and negative charge are described. The device is reusable and lends itself to in-line monitoring as opposed to some prior art devices used for end-of-line monitoring.