Voltage regulator for semiconductor non-volatile electrically programmable memory device
US5844404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1996 |
| Grant date | Dec 1, 1998 |
| Priority date | — |
| Expiry date | Sep 30, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage regulator for electrically programmable non-volatile memory cells includes a gain stage which is supplied a voltage from a voltage booster connected to a supply voltage reference, having an input terminal connected to an output of a voltage divider and an output terminal connected to a pull-up transistor of a pull-up and pull-down differential pair to output the regulated voltage for programming at least one column or bit line of the memory cells. The voltage regulator also includes a second gain stage having an input terminal connected to a second output of the voltage divider. The second stage has an output connected to turn on the pull-down transistor in the complementary pair upon the regulated voltage exceeding a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.