Masking methods for semiconductor materials
US5846609A · kind A · utility
5Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 3, 1997 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Jan 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a mask including providing a fluid from a group including oxygen based, nitrogen based, or carbon based fluids, introducing a substrate of semiconductor material into the fluid, and growing a film with thickness in a range of 10-20 .ANG. on a surface by converting the fluid adjacent the surface into a reactive species. The reactive species is created by directing light having a wavelength at the absorption peak of the fluid so as to convert the fluid into the reactive species. The surface of the substrate reacts with the reactive species to form the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.