Method of manufacturing a ferroelectric device
US5846847A · kind A · utility
2Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1996 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Nov 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.