Method of manufacturing semiconductor integrated circuit device
US5846869A · kind A · utility
24Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1996 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Jul 24, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a bipolar transistor having an improved polysilicon emitter is disclosed. More specifically, hydrogen terminations or OH group terminations adhered (bonded) to an emitter-forming region are eliminated by a heat treatment in an inert gas atmosphere before forming emitter polysilicon. Subsequently, an amorphous silicon film for forming an emitter polysilicon is formed at a low temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.