Thin film ferroelectric composites and method of making
US5846893A · kind A · utility
190Cited by
6References
13Claims
0Family size
Inventors
Key dates
| Filing date | Dec 8, 1995 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Dec 8, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q3/44
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A thin film composite material comprises barium strontium titanate represented as Ba.sub.1-x Sr.sub.x TiO.sub.3 wherein x is greater than 0.0 but less than or equal to 0.75 and a magnesia-based compound such as MgZrO.sub.3, MgTiO.sub.3, MgAl.sub.2 O.sub.4 and mixtures thereof. The thin film ferroelectric composite is made using pulsed laser deposition and exhibits high tunability, low loss and a low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.