Molecular level, precision control over the interfacial properties of high-T.sub.C superconductor structures and devices
US5846909A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 22, 1995 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | May 22, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/268
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Use of monolayer films for the direct modification of high-T.sub.c superconductor structures and devices. Methods for the formation of superconductor localized monolayer films have been discovered based on the spontaneous adsorption of molecules containing ligating functionalities, such as alkylamine, arylamine, and alkylthiol moieties. Molecules containing these types of functionalities are found to bind tenaciously to the metal ions which form the high-T.sub.c superconductor surface. The derivatized superconductor structures can be prepared simply by soaking the high-T.sub.c, superconductor structure or device in a dry organic solvent system which contains the derivatizing agent. Large changes in the superconductor interfacial properties can be achieved with such procedures allowing for the atomic level control of the surface properties of the superconductor. This discovery is particularly important to provide a) new methods to fabricate superconductor devices with atomic level precision, b) to form defect-free anti-corrosion layers, c) improved/optimized methods for lithographic processing of high-T.sub.c devices, and d) improved adhesion of protective layers by surface-modifica…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.