Field emission device including a resistive layer
US5847496A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1997 |
| Grant date | Dec 8, 1998 |
| Priority date | — |
| Expiry date | Aug 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microelectronic field emission device includes a core layer (16) having at least one outward protuberance on a top surface of the core layer, and an emitter layer (15) formed on the core layer to cover at least a top portion of the outward protuberance, the material of the core layer having a larger electrical resistance than the material of the emitter layer, wherein the top portion of the outward protuberance culminates to a tip and a portion of the emitter layer (15) formed on the protuberance culminates to a tip. The microelectronic device may further include a substrate (19), a conductive layer (17), an anode electrode (53) including a phosphor layer, and a gate electrode (21) having an opening thereby exposing the tip of the emitter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.