Oxygen sensor for preventing silicon poisoning
US5849165A · kind A · utility
26Cited by
18References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1995 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Mar 21, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4077
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Oxygen sensor element (ZrO.sub.2 solid electrolyte etc) for detecting oxygen concentration in an exhaust gas has a protective layer which is made of a heat-resistant metal oxide and which carries a component of a IIa subgroup element (Ca, Mg etc) on the side exposed to the exhaust gas of the sensor element, at least a part of the protective layer being present as a nonstoichiometric compound (Ti oxide etc) with respect to the heat-resistant metal oxide. Si-poisoning is prevented. Heater for heating the sensor element is provided for preventing Si-poisoning at low temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.