Spin valve film
US5849422A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 18, 1997 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Sep 18, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12951
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a spin valve film having a first magnetic layer, a non-magnetic layer, a second magnetic layer, and an antiferromagnetic layer as the fundamental structure for the film. In such structure of the spin valve film, a single-layered film or a multi-layered film consisting of CoZrNb, CoZrMo, FeSiAl or FeSi, or a material prepared by adding Cr, Mn, Pt, Ni, Cu, Ag, Al, Ti, Fe, Co or Zn to the above-mentioned substance is used for at least one of the first magnetic layer and second magnetic layer. According to the present invention, a thin spin valve film having a good sensitivity with respect to magnetic field and a significant magnetoresistive effect can be obtained. When using this thin film for a shield reproducing head or a yoke reproducing head, the maximum reproducing output obtainable is approximately four times that of a reproducing head which utilizes the magnetoresistive effect provided by the application of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.