Plasma processing method and plasma processing apparatus
US5849455A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1995 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Dec 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method and a plasma processing apparatus are provided in which a deposition film is formed, on a substrate serving also as an electrode, by application of high frequency power ranging from 20 MHz to 450 MHz with simultaneous application of DC voltage ranging from 30 to 300 V or -30 to -300 V and/or AC voltage ranging from 30 to 600 V to the substrate in an evacuatable reaction chamber. This method make it practicable to uniformize the plasma and the film thickness distribution independently of the discharge frequency and the applied high frequency power, thereby broadening the allowable range of conditions of the processing such as film formation and the allowable range of the design of the apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.