Method for fabricating a semiconductor wafer
US5849636A · kind A · utility
8Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1996 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Dec 12, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method processes a semiconductor wafer by etching the wafer, which has been smoothed by rough lapping, with alkaline solution. A rod is sliced into a plurality of wafers. The peripheral edges of the wafers are chamfered. The processed strain layers over the wafers due to chamfering are smoothed and planarized. The processed strain layers are then removed by etching with alkaline solution. The etched wafers are mirror polished. Lastly, the mirror-polished wafers are cleaned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.