Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories
US5850089A · kind A · utility
38Cited by
5References
8Claims
0Family size
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Key dates
| Filing date | Mar 13, 1992 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Mar 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380.degree. C. to about 650.degree. C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.