Uncooled amorphous YBaCuO thin film infrared detector
US5850098A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 1998 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | May 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N19/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.