Ferroelectric semiconductor device and method of manufacture
US5851844A · kind A · utility
8Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1996 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Nov 7, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/701
Abstract
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (15) of ferroelectric material disposed on a semiconductor substrate (11) and a gate structure (27) formed on the semiconductor substrate (11). A source region (23) and a drain region (24) are formed on the semiconductor substrate such that the source region (23) and the drain region (24) are laterally spaced apart from the gate structure (27).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.