Die attached process for SiC
US5851852A · kind A · utility
14Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1996 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Feb 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10272
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A die attach procedure for SiC uses the scrubbing technique to bond a SiC die to a package. A first layer is formed on the SiC die. This first layer, preferably of nickel, bonds to the SiC die. A second layer, preferably amorphous silicon, is then formed on the first layer. The second layer bonds to the first layer, and forms a eutectic with the material, usually gold, plating the package when the SiC die is scrubbed onto the package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.