Method of manufacturing oxide crystal
US5851956A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 7, 1996 |
| Grant date | Dec 22, 1998 |
| Priority date | — |
| Expiry date | Oct 7, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/729
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A large oxide crystal of high quality is manufactured by increasing the speed of crystal growth without affecting crystal growth. A melt of BaO--CuO as a raw material put in a crucible is heated and melt in the presence of a solid phase precipitate of Y.sub.2 BaCuO.sub.5 and kept at a prescribed temperature. Thereafter, a seed crystal is pulled up while being rotated, with the seed crystal being in contact with the surface of the melt, whereby an oxide crystal having the structure of YBa.sub.2 Cu.sub.3 O.sub.7-x this method, an atmosphere for growing the oxide crystal has an oxygen partial pressure higher than that in an ambient atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.