Method for forming crystal and crystal article obtained by said method
US5853478A · kind A · utility
18Cited by
15References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.