Gas distribution system and method for chemical vapor deposition apparatus
US5853484A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 9, 1996 |
| Grant date | Dec 29, 1998 |
| Priority date | — |
| Expiry date | Oct 9, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas distribution system for a chemical vapor deposition (CVD) apparatus includes a main gas supply pipe for receiving gas from a gas supply, a manifold communicated to the main gas supply pipe and having a plurality of sub-pipes, a plurality of gas metering valves provided at each of the sub-pipes so as to control gas amount flowing therein from each of the sub-pipes, a gas distribution head communicating with each of the sub-pipes so as to collectively jet gas therefrom, a control unit for outputting control signals to each of the gas control valves, and an N-point scanner electrically connected to input terminals of the control unit. The gas distribution system improves deposition uniformity by adjusting the thickness of a film deposited on a wafer in accordance with scanning information from the N-point scanner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.